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| FDS8960C Dual N & P-Channel PowerTrench(R) MOSFET November 2005 FDS8960C Dual N & P-Channel PowerTrench(R) MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. * * Features * Q1: N-Channel RDS(on) = 0.024 @ VGS = 10V RDS(on) = 0.032 @ VGS = 4.5V * Q2: P-Channel RDS(on) = 0.053 @ VGS = -10V RDS(on) = 0.087 @ VGS = -4.5V Fast switching speed RoHS compliant 7.0A, 35V -5A, -35V D1 D D1 D DD2 D2 D Q2 5 6 Q1 4 3 2 1 SO-8 Pin 1 SO-8 G1 S1 S G2 S2 G 7 8 S S Absolute Maximum Ratings Symbol VDSS VDS(Avalanche) VGSS ID PD TA = 25C unless otherwise noted Parameter Drain-Source Voltage Drain-Source Avalanche Voltage (maximum) Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 3) Q1 35 40 20 7 20 (Note 1a) (Note 1b) (Note 1c) Q2 -35 -40 25 -5 -20 2 1.6 1 0.9 -55 to +150 Units V V V A W (Note 1a) TJ, TSTG Operating and Storage Junction Temperature Range C C/W C/W Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 Package Marking and Ordering Information Device Marking FDS8960C Device FDS8960C Reel Size 13" Tape width 12mm Quantity 2500 units www.fairchildsemi.com (c)2005 Fairchild Semiconductor Corporation FDS8960C Rev C1(W) FDS8960C Dual N & P-Channel PowerTrench(R) MOSFET Electrical Characteristics Symbol EAS IAS TA = 25C unless otherwise noted Parameter Drain-Source Avalanche Energy (Single Pulse) Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Test Conditions VDD = 35 V, ID = 7 A, L = 1 mH Type Min Typ Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 35 -35 31 -40 7 -5 Max Units 24.5 12.5 mJ mJ A Drain-Source Avalanche Ratings VDD = -35 V, ID =-5 A, L = 1 mH Off Characteristics BVDSS BVDSS TJ IDSS IGSSF IGSSR IGSSR IGSSF ID = 250 A VGS = 0 V, ID = -250 A VGS = 0 V, ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C VDS = 28 V, VGS = 0 V VGS = 0 V VDS = -28 V, VGS = 20 V, VDS = 0 V VDS = 0 V VDS = 0 V VDS = 0 V V mV/C 1 -1 100 -100 100 -100 A nA nA nA nA Gate-Body Leakage, Reverse VGS = -20 V, Gate-Body Leakage, Forward VGS = 25 V, Gate-Body Leakage, Reverse VGS = -25 V, (Note 2) On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance gFS Forward Transconductance ID = 250 A VDS = VGS, ID = -250 A VDS = VGS, ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C VGS = 10 V, ID = 7 A ID = 6 A VGS = 4.5 V, VGS = 10 V, ID = 7 A, TJ = 125C ID = -5 A VGS = -10 V, ID = -4 A VGS = -4.5 V, VGS = -10 V, ID = -5 A, TJ = 125C VDS = 5 V, ID = 7 A ID =-5 A VDS = -5 V, Q1 VDS = 15 V, VGS = 0 V, f = 1.0 MHz Q1 Q2 Q1 Q2 Q1 1 -1 2 -1.8 -5 4 20 25 29 44 70 61 23 9 570 540 126 113 52 60 2 6 3 -3 V mV/C 24 32 37 53 87 79 m Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Q2 Reverse Transfer Capacitance VDS = -15 V, VGS = 0 V, f = 1.0 MHz Gate Resistance f = 1.0 MHz pF pF pF FDS8960C Rev C1(W) www.fairchildsemi.com FDS8960C Dual N & P-Channel PowerTrench(R) MOSFET Electrical Characteristics Symbol Parameter (continued) TA = 25C unless otherwise noted Test Conditions (Note 2) Type Min Typ Max Units Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Q1 VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6 Q2 VDD = -15 V, ID = -1 A, VGS = -10V, RGEN = 6 Q1 VDS = 15 V, ID = 7 A, VGS = 5 V Q2 VDS = -15 V, ID = -5 A,VGS = -5 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 8 12 5 16 23 20 3 5 5.5 5.7 1.8 1.8 1.8 2 16 22 10 29 37 32 6 10 7.7 8 ns ns ns ns nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 1.3 A VGS = 0 V, IS = -1.3 A Q1 IF = 7 A, diF/dt = 100 A/s Q2 IF = -5 A, diF/dt = 100 A/s (Note 2) (Note 2) 0.8 -0.8 20 17 10 5 1.3 -1.3 1.2 -1.2 A V nS nC Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 0.5 in2 pad of 2 oz copper b) 125C/W when mounted on a .02 in2 pad of 2 oz copper c) 135C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. BV(avalanche) Single-Pulse rating is guaranteed by design if device is operated within the UIS SOA boundary of the device. FDS8960C Rev C1(W) www.fairchildsemi.com FDS8960C Dual N & P-Channel PowerTrench(R) MOSFET Typical Characteristics: Q1 (N-Channel) 20 2.6 VGS = 10V 6.0V 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.5V 2.4 2.2 2 VGS = 3.5V 1.8 1.6 1.4 1.2 1 0.8 0 0.5 1 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 2 16 ID, DRAIN CURRENT (A) 12 8 4.0V 4.5V 5.0V 6.0V 10V 3.0V 4 0 0 4 8 12 ID, DRAIN CURRENT (A) 16 20 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.065 ID = 3.5A RDS(ON), ON-RESISTANCE (OHM) 0.055 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 ID = 7A VGS = 10V 0.045 TA = 125oC 0.035 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0.025 TA = 25oC 0.015 2 3 4 5 6 7 8 VGS, GATE TO SOURCE VOLTAGE (V) 9 10 Figure 3. On-Resistance Variation with Temperature. 30 VDS = 5V 25 ID, DRAIN CURRENT (A) 125oC 20 IS, REVERSE DRAIN CURRENT (A) TA = -55oC 25oC Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 10 TA = 125oC 1 25oC -55oC 0.01 15 0.1 10 5 0.001 0 1.5 2.5 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4.5 0.0001 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS8960C Rev C1(W) www.fairchildsemi.com FDS8960C Dual N & P-Channel PowerTrench(R) MOSFET Typical Characteristics: Q1 (N-Channel) 10 800 VGS, GATE-SOURCE VOLTAGE (V) ID = 7A 8 VDS = 10V 15V 700 f = 1 MHz VGS = 0 V Ciss CAPACITANCE (pF) 20V 6 600 500 400 300 4 Coss 200 100 2 Crss 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 35 0 0 2 4 6 8 10 12 0 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT 100s P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics. 40 ID, DRAIN CURRENT (A) 10 1ms 10ms 100ms SINGLE PULSE RJA = 135C/W TA = 25C 30 1 10s DC VGS = 10V SINGLE PULSE RJA = 135oC/W TA = 25oC 1s 20 0.1 10 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 100 40 I(pk), PEAK TRANSIENT CURRENT (A) 30 I(AS), AVALANCHE CURRENT(A) SINGLE PULSE RJA = 135C/W TA = 25C TJ = 25 C o 20 10 10 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 1 0.01 0.1 1 10 tAV, TIME IN AVANCHE(ms) Figure 11. Single Pulse Maximum Peak Current Figure 12. Unclamped Inductive Switching Capability FDS8960C Rev C1(W) www.fairchildsemi.com FDS8960C Dual N & P-Channel PowerTrench(R) MOSFET Typical Characteristics: Q2 (P-Channel) 20 3.4 -4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -10V -ID, DRAIN CURRENT (A) 16 -6.0V 3.2 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 -4.0V -4.5V -5.0V -6.0V -10V VGS = - 3.5V 12 8 -3.5V 4 -3.0V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0 5 10 -ID, DRAIN CURRENT (A) 15 20 Figure 13. On-Region Characteristics. Figure 14. On-Resistance Variation with Drain Current and Gate Voltage. 0.2 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 o ID = -5A VGS = - 10V ID = -2.5A 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 TA = 125oC TA = 25oC 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 15. On-Resistance Variation with Temperature. 20 VDS = -5V Figure 16. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 16 TA = -55oC 12 125oC 8 25 C o 10 1 0.1 0.01 0.001 0.0001 VGS = 0V TA = 125oC 25oC -55oC 4 0 1.5 2 2.5 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 17. Transfer Characteristics. Figure 18. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS8960C Rev C1(W) www.fairchildsemi.com FDS8960C Dual N & P-Channel PowerTrench(R) MOSFET Typical Characteristics: Q2 (P-Channel) 10 -VGS, GATE-SOURCE VOLTAGE (V) 800 ID = -5A 8 VDS = -10V -15V -20V CAPACITANCE (pF) 700 f = 1 MHz VGS = 0 V CISS 600 500 400 300 6 4 COSS 200 100 2 CRSS 0 0 2 4 6 8 10 12 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 25 30 35 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 19. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) Figure 20. Capacitance Characteristics. 50 -ID, DRAIN CURRENT (A) RDS(ON) LIMIT 10 10ms 100ms 1 DC 0.1 VGS = -10V SINGLE PULSE RJA = 135oC/W TA = 25oC 0.01 0.1 1 10 1s 10s 1ms 100s 40 SINGLE PULSE RJA = 135C/W TA = 25C 30 20 10 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 21. Maximum Safe Operating Area. Figure 22. Single Pulse Maximum Power Dissipation. 10 I(AS), AVALANCHE CURRENT(A) 30 I(pk), PEAK TRANSIENT CURRENT(A) SINGLE PULSE RJA = 135C/W TA = 25C 20 TJ = 25 C o 10 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 1 0.01 0.1 1 10 tAV, TIME IN AVANCHE(ms) Figure 23. Single Pulse Maximum Peak Current Figure 24. Unclamped Inductive Switching Capability FDS8960C Rev C1(W) www.fairchildsemi.com FDS8960C Dual N & P-Channel PowerTrench(R) MOSFET Typical Characteristics r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 135 C/W P(pk) t1 t2 SINGLE PULSE o 0.1 0.1 0.05 0.02 0.01 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 t1, TIME (sec) 1 10 100 1000 0.001 0.0001 0.001 Figure 25. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. FDS8960C Rev C1(W) www.fairchildsemi.com |
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